Pure-silica-zeolite low dielectric constant films: Present and the future
Department of Chemical and Environmental Engineering, University of California, Riverside ◇ Riverside, CA 92521
Department of Chemical and Environmental Engineering, University of California, Riverside ◇ Riverside, CA 92521
The semiconductor industry has been evolving at an remarkable pace for the past four decades.To continue the evolution at this pace,new materials with unique combination of Properties have to be introduced and incorporated,and one of them is low dielectric constant(low-k)materials. The material of choice for dielectric materials since the inception of the semiconductor industry has been dense silica that has a k=4.0. To reduce k,many materials have been studied and one major class is porous silica.Incorporation of air reduces k because air has a k of about 1. Here pure-silica-zeolite as a possible low-k materialis reviewed. Its major advantages over other porous silicas such as sol-gel silica and mesoporous silica are high mechnical strength,high thermal conductivity,and low hydrophilicity. The performance data and the deposition processes for zeolite low-k materials are analyzed. The data available so far are promissing,but more chactarizations are needed and many technical issues are yet to be resolved. The future research needs for this technology are also discussed.
Key words: zeolite; film; dielectric; silica; porous
© 2003 ゼオライト学会© 2003 Japan Association of Zeolite
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