日本ゼオライト学会 刊行物 Publication of Japan Zeolite Association

ISSN: 0918–7774
一般社団法人日本ゼオライト学会 Japan Zeolite Association
〒162-0801 東京都新宿区山吹町358-5 アカデミーセンター Japan Zeolite Association Academy Center, 358-5 Yamabuki-cho, Shinju-ku, Tokyo 162-0801, Japan
Zeolite News Letters 20(3): 111-120 (2003)
doi:10.20731/zeoraito.20.3.111

解説解説

Pure-silica-zeolite low dielectric constant films: Present and the future

Department of Chemical and Environmental Engineering, University of California, Riverside ◇ Riverside, CA 92521

発行日:2003年9月10日Published: September 10, 2003
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The semiconductor industry has been evolving at an remarkable pace for the past four decades.To continue the evolution at this pace,new materials with unique combination of Properties have to be introduced and incorporated,and one of them is low dielectric constant(low-k)materials. The material of choice for dielectric materials since the inception of the semiconductor industry has been dense silica that has a k=4.0. To reduce k,many materials have been studied and one major class is porous silica.Incorporation of air reduces k because air has a k of about 1. Here pure-silica-zeolite as a possible low-k materialis reviewed. Its major advantages over other porous silicas such as sol-gel silica and mesoporous silica are high mechnical strength,high thermal conductivity,and low hydrophilicity. The performance data and the deposition processes for zeolite low-k materials are analyzed. The data available so far are promissing,but more chactarizations are needed and many technical issues are yet to be resolved. The future research needs for this technology are also discussed.

Key words: zeolite; film; dielectric; silica; porous

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